Professor Saibal Mukhopadhyay received the bachelor of engineering degree in electronics and telecommunication engineering from Jadavpur University, Calcutta, India in 2000 and the Ph.D. degree in electrical and computer engineering from Purdue University, West Lafayette, IN, in August 2006. He joined the faculty of the Georgia Institute of Technology in September 2007.
Dr. Mukhopadhyay worked at IBM T. J. Watson Research Center, Yorktown Heights, N.Y. as research staff member from August 2006 to September 2007 and as an intern in summers of 2003, 2004, and 2005. At IBM, his research primarily focused on technology-circuit co-design methodologies for low-power and variation tolerant static random access memory (SRAM) in sub-65nm silicon technologies. Dr. Mukhopadhyay has (co)-authored over 90 papers in reputed conferences and journals and filed seven United States patents.